Christophe Maleville
56Patents
11h-index
52Co-inventors
81Inventor score
Filing activity: Aug 11, 1998 → Jun 14, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6756286B1 | Method for transferring a thin film comprising a step of generating inclusions | Emerging Cross-Sectional Technologies | 163 | Expired |
| US6596610B1 | Method for reclaiming delaminated wafer and reclaimed delaminated wafer | Emerging Cross-Sectional Technologies | 62 | Expired |
| US6403450B1 | Heat treatment method for semiconductor substrates | Electricity | 43 | Expired |
| US6429094B1 | Treatment process for molecular bonding and unbonding of two structures | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7138325B2 | Method of manufacturing a wafer | Chemistry; Metallurgy | 19 | Expired |
| US7022586B2 | Method for recycling a substrate | Electricity | 17 | Expired |
| US6720640B2 | Method for reclaiming delaminated wafer and reclaimed delaminated wafer | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7229899B2 | Process for the transfer of a thin film | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7749862B2 | Methods for minimizing defects when transferring a semiconductor useful layer | Electricity | 15 | Active |
| US7883994B2 | Process for the transfer of a thin film | Emerging Cross-Sectional Technologies | 12 | Active |
| US6853802B2 | Heat treatment for edges of multilayer semiconductor wafers | Electricity | 12 | Expired |
| US9209301B1 | Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers | Electricity | 11 | Active |
| US6828216B2 | Process for detaching layers of material | Electricity | 11 | Expired |
| US7297611B2 | Method for producing thin layers of semiconductor material from a donor wafer | Electricity | 10 | Expired |
| US7081399B2 | Method for producing a high quality useful layer on a substrate utilizing helium and hydrogen implantations | Electricity | 9 | Expired |
| US6884697B2 | Process for cleaving a wafer layer from a donor wafer | Electricity | 8 | Expired |
| US7071077B2 | Method for preparing a bonding surface of a semiconductor layer of a wafer | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7413964B2 | Method of revealing crystalline defects in a bulk substrate | Physics | 8 | Active |
| US6939783B2 | Preventive treatment method for a multilayer semiconductor wafer | Electricity | 8 | Expired |
| US6903032B2 | Method for preparing a semiconductor wafer surface | Electricity | 7 | Expired |
| US6987051B2 | Method of making cavities in a semiconductor wafer | Electricity | 6 | Expired |
| US9576798B2 | Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers | Electricity | 6 | Active |
| US7452584B2 | Method of increasing the area of a useful layer of material transferred onto a support | Emerging Cross-Sectional Technologies | 5 | Active |
| US8609514B2 | Process for the transfer of a thin film comprising an inclusion creation step | Emerging Cross-Sectional Technologies | 4 | Active |
| US7190029B2 | Preventive treatment method for a multilayer semiconductor wafer | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.