Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
US6828241B2 · kind B2 · utility
131Cited by
16References
56Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Nov 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electro-negative cleaning or etchant gas, such as fluorine, that was ionized from a stable supply gas such as NH3 in a secondary chamber and recombined in the primary chamber, is re-ionized within the primary chamber by electron attachment by ionizing an electron donor gas, such as helium, in the primary chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.