Floating gate memory device with homogeneous oxynitride tunneling dielectric
US6828623B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2002 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Aug 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A memory device with homogeneous oxynitride tunneling dielectric. Specifically, the present invention describes a flash memory cell that includes a tunnel oxide dielectric layer including homogeneous oxynitride. The tunnel oxide dielectric layer separates a floating gate from a channel region that is formed between a source region and a drain region in a substrate. The flash memory cell further includes a dielectric layer that separates a control gate from the floating gate. In one case, the homogenous oxynitride is a defect free silicon nitride. The homogeneity of the oxynitride is due to the uniform distribution of nitride within the tunnel oxide dielectric layer. Further, the use of the homogeneous oxynitride can increase the dielectric constant and lower the barrier height of the tunnel oxide dielectric layer for increased performance. Also, the homogenous oxynitride supports source-side channel hot hole erasing in the flash memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.