Programming of nonvolatile memory cells
US6829172B2 · kind B2 · utility
53Cited by
182References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2002 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | May 28, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifying a programmed or a non-programmed state of the cell. If the cell is in the non-programmed state, the method includes the steps of increasing the drain voltage and maintaining the gate voltage at a constant level during at least a part of the step of increasing. The steps of applying, verifying, increasing and maintaining are repeated until the cell reaches the programmed state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.