Method for precharging memory cells of a dynamic semiconductor memory during power-up and semiconductor memory
US6829185B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 7, 2002 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Nov 16, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4072
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor memory, during the rewriting of the signal stored in a memory cell, a displacement current is produced in the cell capacitor, which has to be supplied by an on-chip plate generator. If a very large number of cell capacitors are simultaneously subjected to charge reversal, as may be necessary in particular during power-up, then the plate generator cannot supply the required current within the predetermined time window. Therefore, the memory cells can assume undesired, incorrect values. It is proposed to precharge the memory cells to a predetermined potential during the switch-on of the operating voltage. Therefore, the displacement current is reduced overall, so that the plate generator can apply the required current for charging the memory cells. This measure prevents a change to the cell contents using simple measures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.