Method for producing group-III nitride compound semiconductor device
US6830949B2 · kind B2 · utility
13Cited by
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16Claims
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Key dates
| Filing date | Oct 21, 2002 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Jan 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor layer is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110% of a sputtering voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.