Masanobu Senda
25Patents
14h-index
22Co-inventors
77Inventor score
Filing activity: Feb 22, 1989 → Jun 9, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7128846B2 | Process for producing group III nitride compound semiconductor | Electricity | 88 | Expired |
| US6841808B2 | Group III nitride compound semiconductor device and method for producing the same | Electricity | 83 | Expired |
| US6875629B2 | III group nitride based semiconductor element and method for manufacture thereof | Emerging Cross-Sectional Technologies | 41 | Expired |
| US6897139B2 | Group III nitride compound semiconductor device | Emerging Cross-Sectional Technologies | 40 | Expired |
| US6956245B2 | Group III nitride compound semiconductor light-emitting element | Electricity | 29 | Expired |
| US5097358A | Electrochromic element | Physics | 28 | Expired |
| US6713789B1 | Group III nitride compound semiconductor device and method of producing the same | Electricity | 22 | Expired |
| US6593016B1 | Group III nitride compound semiconductor device and producing method thereof | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7042012B2 | Semiconductor light-emitting device | Electricity | 19 | Expired |
| US6531719B2 | Group III nitride compound semiconductor device | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5985451A | Elastic product | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7253450B2 | Light-emitting device | Electricity | 15 | Expired |
| US6925100B2 | Communication device | Electricity | 14 | Expired |
| US6623998B2 | Method for manufacturing group III nitride compound semiconductor device | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6830949B2 | Method for producing group-III nitride compound semiconductor device | Electricity | 13 | Expired |
| US6939733B2 | Group III nitride compound semiconductor device and method of producing the same | Electricity | 11 | Expired |
| US5590887A | Sealing apparatus | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7087930B2 | Semiconductor light emitting element and method of making same | Electricity | 7 | Expired |
| US5173146A | Plasma treatment method | Performing Operations; Transporting | 5 | Expired |
| US5728328A | Method of molding a product having low gloss surface | Performing Operations; Transporting | 5 | Expired |
| US7981744B2 | Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth | Electricity | 5 | Active |
| US6924515B2 | Semiconductor light-emitting element | Electricity | 3 | Expired |
| US5064679A | Plasma treatment method | Performing Operations; Transporting | 2 | Expired |
| US6918961B2 | Group III nitride compound semiconductor device and producing method therefor | Emerging Cross-Sectional Technologies | 2 | Expired |
| US5015075A | Electrochromic element | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.