Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration

US6831003B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Richard J. Huang · Cupertino, US
• Pin-Chin Connie Wang · Menlo Park, US
• Darrell M. Erb · Los Altos, US

Key dates

• Filing date: May 31, 2002
• Grant date: Dec 14, 2004
• Expiry date: Jan 7, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76865
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

For filling an interconnect opening within a porous dielectric material, a diffusion barrier material is deposited onto at least one sidewall of the interconnect opening. A thickness of the diffusion barrier material is equal to or greater than a radius of a pore opened at the sidewall to substantially fill the opened pore. The thickness of the diffusion barrier material is equal to or greater than a mean radius of pores opened at the sidewall to substantially fill a majority of the opened pores. Or, the thickness of the diffusion barrier material is equal to or greater than a radius of a largest pore opened at the sidewall to substantially fill all opened pores. The interconnect opening is then filled with a conductive fill material.