Ferroelectric composite material, method of making same and memory utilizing same
US6831313B2 · kind B2 · utility
21Cited by
1References
14Claims
0Family size
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Key dates
| Filing date | Jul 22, 2003 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Jul 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.