Gap-filling process
US6833318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2002 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Nov 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.