Method for plasma etching performance enhancement
US6833325B2 · kind B2 · utility
43Cited by
23References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2002 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Nov 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.