Method for forming fine patterns in semiconductor device
US6833326B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2003 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Jul 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a method of forming a fine pattern in a semiconductor device using a photolithography process, which comprises: coating a photoresist layer for an I-line and a positive type ArF photoresist layer on a semiconductor substrate that includes a conductive layer; performing exposure and a first baking process on the resultant substrate by using an etch-mask of a desired pattern to produce alcohol radicals (OH−) or carboxyl acid (COOH) in the positive type ArF photoresist layer, in which a silylation reaction can be produced; removing the etch-mask; performing a development process to the resultant structure to form a first photoresist pattern; performing exposure and a second baking process on the substrate that includes the first photoresist pattern; performing a silylation process to the substrate to which the second baking process has been performed, by using an HMDS to form a silicon oxide layer on the surface of the first photoresist pattern through reaction between the alcohol radicals (OH−) or the carboxyl acid (COOH) and the HMDS; performing a dry development process to the photoresist layer for the I-line by using the first photoresist pattern along wit…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.