Cross point memory array using multiple modes of operation
US6834008B2 · kind B2 · utility
117Cited by
28References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2002 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Dec 26, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Cross point memory array using multiple modes of operation. The invention is a cross point memory array that uses a read mode to determine the resistive state of a memory plug, a first write mode to cause the memory plug to change from a first resistive state to a second resistive state, and a second write mode to cause the memory plug to change from the second resistive state back to the first resistive state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.