Plasma process for removing polymer and residues from substrates
US6834656B2 · kind B2 · utility
14Cited by
12References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2001 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Sep 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for removing polymers formed during etching and etch residues from a semiconductor substrate by exposing the substrate to plasmas of neutral chemistry. The plasma generates atomic hydrogen species and atomic oxygen species in about equal amounts that react with and remove the polymers and etch residues from the substrate. The process is especially suitable for use with semiconductor substrates comprising low k dielectric materials and/or copper interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.