Chemical-mechanical polishing methods
US6835121B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Dec 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.