Patent · US Expired

Method for producing a photomask and corresponding photomask

US6835506B2 · kind B2 · utility

0Cited by
1References
8Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 19, 2002
Grant dateDec 28, 2004
Priority date
Expiry dateJan 12, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/26
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present invention provides a method for producing a photomask (1), which has the following steps: provision of a mask blank with a substrate (1a) and a masking layer (1b) applied thereto; whole-area resist-coating of the mask blank with a photoresist; performance of a raster scan exposure of the photoresist in accordance with a predetermined photomask pattern in a pattern region (MB), which is separated from an edge (1c) of the mask blank by a peripheral edge region (RB); performance of the raster scan exposure in at least one peripheral partial region of the edge region (RB), which adjoins the edge (1c) on one side; development of the exposed photoresist; etching of the masking layer (1b); and removal of the photoresist. The present invention also provides a corresponding photomask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.