Large-area membrane mask and method for fabricating the mask

US6835508B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• IMS-Ionen Mikrofabrikationas Systeme · AT

Inventors

• Jörg Butschke · Stuttgart, DE
• Albrecht Ehrmann · Aalen, DE
• Ernst Haugeneder · Wien, AT
• Frank-Michael Kamm · Dresden, DE
• Florian Letzkus · Bingen, DE
• Hans Loschner · Wien, AT
• Reinhard Springer · Sulz, DE

Key dates

• Filing date: Aug 8, 2002
• Grant date: Dec 28, 2004
• Expiry date: Jan 15, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/22
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.