Method of manufacturing image sensor for reducing dark current
US6835590B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 14, 2002 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Feb 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed method provides a method capable of removing dangling bonds generated on a surface of photodiode. The method includes steps of: forming a photodiode in a semiconductor substrate; forming a transfer transistor, a reset transistor, a drive transistor and a select transistor on the semiconductor substrate; forming a first interlayer insulating layer on the semiconductor substrate, wherein the first interlayer insulating layer contains hydrogen ions; forming a second interlayer insulating layer on the first interlayer insulating layer; and flattening the second interlayer insulating layer by flowing and simultaneously diffusing the hydrogen ions into a surface of the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.