Epitaxially grown fin for FinFET

US6835618B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Srikanteswara Dakshina-Murthy · Wappingers Falls, US
• Chih-Yuh Yang · San Jose, US
• Bin Yu · Cupertino, US

Key dates

• Filing date: Aug 5, 2003
• Grant date: Dec 28, 2004
• Expiry date: Aug 5, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/751

Abstract

A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method further includes growing a second material in the trench to form the fin and removing the layer of first material.