Method to enhance inductor Q factor by forming air gaps below inductors
US6835631B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2003 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Nov 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of enhancing inductor performance comprising the following steps. A structure having a first oxide layer formed thereover is provided. A lower low-k dielectric layer is formed over the first oxide layer. A second oxide layer is formed over the lower low-k dielectric layer. The second oxide layer is patterned to form at least one hole there through exposing a portion of the lower low-k dielectric layer. Etching through the exposed portion of the lower low-k dielectric layer and into the lower low-k dielectric layer to from at least one respective air gap within the etched lower low-k dielectric layer. An upper low-k dielectric layer is formed over the patterned second oxide layer. At least one inductor is formed within the upper low-k dielectric layer and over the at least one air gap whereby the performance of the inductor is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.