Copper post-etch cleaning process
US6835668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2002 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Nov 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3−, F− and one or more organic acid anions having carboxylate groups. The invention also includes a semiconductor processing method of forming an opening to a copper-containing material. A mass is formed over a copper-containing material within an opening in a substrate. The mass contains at least one of an oxide barrier material and a dielectric material. A second opening is etched through the mass into the copper-containing material to form a base surface of the copper-containing material that is at least partially covered by particles comprising at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a solution comprising nitric acid, hydrofluoric acid and one or more organic acids to remove at least some of the particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.