Variable capactor structure

US6835977B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Jing Gan · Beijing, CN
• Anchor Chen · Pingtung City, TW

Key dates

• Filing date: Mar 5, 2002
• Grant date: Dec 28, 2004
• Expiry date: May 3, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/215

Abstract

A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped well has a cavity. The first type ion-doped buried layer is in the substrate underneath the first type ion-doped well. The first type ion-doped buried layer and the first type ion-doped well are connected. The second type ion-doped region is at the bottom of the cavity of the first type ion-doped well. The conductive layer is above and in connection with the first type ion-doped buried layer.