Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench
US6836001B2 · kind B2 · utility
20Cited by
10References
1Claims
0Family size
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Key dates
| Filing date | May 21, 2003 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | May 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes a semiconductor substrate and a semiconductor layer. The semiconductor substrate has a main surface that is an Si{100} surface. The substrate has a trench in the main surface. The semiconductor layer is located on surfaces defining the trench to have common crystallographic planes with the semiconductor substrate. The trench is defined by a bottom surface, two long sidewall surfaces that face each other, and two short sidewall surfaces that face each other. The bottom surface and the long sidewall surfaces are Si{100} surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.