Substrate processing method and substrate processing apparatus
US6837631B2 · kind B2 · utility
13Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2001 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Mar 19, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/3021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.