Method and apparatus for cleaning deposited films from the edge of a wafer
US6837967B1 · kind B1 · utility
53Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2002 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Aug 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67028
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma edge cleaning apparatus is configured to remove film deposits from a wafer edge. A gas distribution manifold is annular shaped and positioned to provide plasma process gases near the edge of the wafer. A top insulator and a wafer support each include a magnetic coil to generate a magnetic field for shielding the selected portions of a wafer from the generated plasma. The top insulator is positioned above the wafer during edge processing so as to form a small gap between the top insulator and the wafer to prevent plasma from etching active die areas of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.