Device and method for detecting alignment of deep trench capacitors and active areas in DRAM devices
US6838296B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2003 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Jul 14, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A test device and method for detecting alignment of deep trench capacitors and active areas in DRAM devices. A quadrilateral active area is disposed in the scribe line region, with four equilaterals and four vertex angles. Parallel first and second deep trench capacitors are disposed in the quadrilateral active area. The first deep trench capacitor has a first surface aligned with a second surface of the second deep trench capacitor. The first and second vertex angles of the four vertex angles have a diagonal line essentially perpendicular to the first and second surfaces. The first and second vertex angles are a predetermined distance from the first surface and the second surface respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.