Method of manufacturing image sensor for reducing dark current
US6838298B2 · kind B2 · utility
10Cited by
5References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 8, 2002 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Nov 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/028
Abstract
A method capable of removing dangling bonds generated on a surface of a photodiode is disclosed herein. The method includes steps of providing a semiconductor substrate having a light sensing area and removing dangling bonds at a surface of the light sensing area by diffusing hydrogen ions to the surface of the light sensing area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.