Patent · US Expired

Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material

US6838363B2 · kind B2 · utility

28Cited by

11References

24Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Karsten Wieczorek · Dresden, DE
Thorsten Kammler · Radeberg, DE
Manfred Horstmann · Dresden, DE

Key dates

Filing date	Mar 28, 2003
Grant date	Jan 4, 2005
Priority date	—
Expiry date	Mar 28, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/015
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The introduction of a barrier diffusion material, such as nitrogen, into a silicon-containing conductive region, for example the drain and source regions and the gate electrode of a field effect transistor, allows the formation of nickel silicide, which is substantially thermally stable up to temperatures of 500° C. Thus, the device performance may significantly improve as the sheet resistance of nickel silicide is significantly less than that of nickel disilicide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.