Clocked based method and devices for measuring voltage-variable capacitances and other on-chip parameters
US6838869B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2001 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Jul 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A characterization method for a device under test includes applying a bias voltage to a test circuit. The test circuit includes a first transistor coupled to the device under test, a second transistor coupled to the device under test and to the first transistor. A third transistor is coupled to a dummy device, a fourth transistor is coupled to the dummy device and to the third transistor. The transistors are of a common type. The characterization method further includes applying non-overlapping clocking signals to transistors of the test circuit to produce test signals for application to the device under test and detecting a current in one or more transistors from the device under test. The bias voltage is further varied to characterize the device under test.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.