Magnetic memory device
US6839271B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2003 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device which comprises a magnetic memory cell that includes a magnetic material switchable between two resistive states on the application of a magnetic field. The device also comprises a wire that is connected to the magnetic memory cell and has a conductive connecting link and a conductive word or bit line which are electrically connected to each other. The connecting link is disposed between the word or bit line and the magnetic memory cell and has a thermal resistance that is larger than that of the word or bit line so as to provide a barrier for heat conduction from the magnetic memory cell to the word or bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.