Method of fabricating a magneto-resistive random access memory (MRAM) device
US6841484B2 · kind B2 · utility
25Cited by
10References
15Claims
0Family size
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Apr 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of etching a multi-layer magnetic stack (e.g., layers of cobalt-iron alloy (CoFe), ruthenium (Ru), platinum-manganese alloy (PtMn), and the like) of a magneto-resistive random access memory (MRAM) device is disclosed. Each layer of the multi-layer magnetic stack is etched using a process sequence including a plasma etch step followed by a plasma treatment step. The plasma treatment step uses a plasma comprising an inert gas to remove residues formed during the plasma etch step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.