Plasma processor with electrode simultaneously responsive to plural frequencies
US6841943B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2002 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Jun 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.