Silicon single crystal wafer and production method thereof and soi wafer
US6843847B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2000 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Dec 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal wafer grown by the CZ method, which is doped with nitrogen and has an N-region for the entire plane and an interstitial oxygen concentration of 8 ppma or less, or which is doped with nitrogen and has an interstitial oxygen concentration of 8 ppma or less, and in which at least void type defects and dislocation clusters are eliminated from the entire plane, and a method for producing the same. Thus, there are provided a defect-free silicon single crystal wafer having an N-region for the entire plane, in which void type defects and dislocation clusters are eliminated, produced by the CZ method under readily controllable stable production conditions with a wide controllable range, and a method producing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.