Chemically amplified resist material and patterning method using same
US6844135B2 · kind B2 · utility
13Cited by
8References
8Claims
0Family size
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Key dates
| Filing date | Jul 8, 2003 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Jul 8, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/122
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified resist material comprising a base resin and a photo acid generator having sensitivity at the wavelength of patterning exposure; wherein, the chemically amplified resist material further comprising an activator that generates an acid or a radical by a treatment other than the patterning exposure. A patterning method using the same is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.