Sandwich photoresist structure in photolithographic process
US6844143B2 · kind B2 · utility
3Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2002 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Dec 11, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photolithographic process that involves building a sandwich photoresist structure. A first photoresist layer is formed over a substrate. An anti-reflection layer is formed over the first photoresist layer. A second photoresist layer is formed over the anti-reflection layer. A first photo-exposure is conducted and the exposed second photoresist layer is developed to pattern the second photoresist layer and the anti-reflection layer. Using the second photoresist layer and the anti-reflection layer as a mask, a second photo-exposure and a second photoresist development are conducted to pattern the first photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.