Method of forming ruthenium and ruthenium oxide films on a semiconductor structure
US6844261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2002 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Dec 17, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/101
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.