Circuit and method of forming the circuit having subsurface conductors
US6844585B1 · kind B1 · utility
2Cited by
39References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2002 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Jun 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.