Antifuse with electrostatic assist
US6844609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2002 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Oct 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and method for providing an antifuse which is closed by laser energy with an electrostatic assist. Two or more metal segments are formed over a semiconductor structure with an air gap or a porous dielectric between the metal segments. Pulsed laser energy is applied to one or more of the metal segments while a voltage potential is applied between the metal segments to create an electrostatic field. The pulsed laser energy softens the metal segment, and the electrostatic field causes the metal segments to move into contact with each other. The electrostatic field reduces the amount of laser energy which must be applied to the semiconductor structure to close the antifuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.