Process for depositing F-doped silica glass in high aspect ratio structures
US6846391B1 · kind B1 · utility
32Cited by
15References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Dec 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an inefficient sputtering inert gas such as He and/or hydrogen. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios greater than 3.0:1 and spacings between lines less than 0.13 microns can be filled with low dielectric constant films without the formation of voids and without damaging circuit elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.