Plasma-assisted dry etching of noble metal-based materials
US6846424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2001 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Oct 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.