Method of forming surface-smoothing layer for semiconductor devices with magnetic material layers
US6846683B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 10, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | May 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (118) and method of fabrication thereof, wherein a plurality of conductive lines (124) are formed over a workpiece, a surface-smoothing conductive material (140) is disposed over the conductive lines (124), and a magnetic material (132) disposed is over the surface-smoothing conductive material (140). The surface-smoothing conductive material (140) has a smaller grain structure than the underlying conductive lines (124). The surface-smoothing conductive material (140) is polished so that the surface-smoothing conductive material (140) has a texturally smoother surface than the surface of the conductive lines (124).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.