Power MOSFET with ultra-deep base and reduced on resistance
US6846706B2 · kind B2 · utility
1Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2003 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Aug 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS-gated semiconductor device is shown and described which includes deep implanted junctions and thick oxide spacers disposed over a substantial portion of common conduction regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.