Process for counter doping N-type silicon in Schottky device Ti silicide barrier
US6846729B2 · kind B2 · utility
50Cited by
4References
14Claims
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Key dates
| Filing date | Sep 25, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Sep 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/605
Abstract
A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dose (e.g. less than about 9E12 atoms per cm2) such that the barrier height is slightly increased and the leakage current reduced without forming pn junction and retaining the peak boron concentration in the titanium silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.