High-density plasma process for filling high aspect ratio structures

US6846745B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• George D. Papasouliotis · Fishkill, US
• Vishal Gauri · San Jose, US
• Raihan M. Tarafdar · San Jose, US
• Vikram Singh · North Andover, US

Key dates

• Filing date: Jan 28, 2002
• Grant date: Jan 25, 2005
• Expiry date: Jun 10, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and fluorine as process gases in the reactive mixture of a plasma-containing CVD reactor. The process gas also includes dielectric forming precursors such as silicon and oxygen-containing molecules.