Ion sources for ion implantation apparatus
US6847043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Jan 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.