Methods that facilitate control of memory arrays utilizing zener diode-like devices
US6847047B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array. State change voltages can be applied to a single device in the array of semiconductor devices without the need for transistor-type voltage controls. The diodic effect of the present invention facilitates this activity by allowing specific voltage levels necessary for state changes to only occur at the desired device. In this manner, an array of devices can be programmed with varying data or states without utilizing transistor technology. The present invention also allows for an extremely efficient method of producing these types of devices, eliminating the need to manufacture costly external voltage controlling semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.