Vertical semiconductor component having a reduced electrical surface field

US6847091B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Heinz Mitlehner · Uttenreuth, DE
• Jeno Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Jan 8, 2001
• Grant date: Jan 25, 2005
• Expiry date: Jan 8, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A vertical semiconductor component having a semiconductor body of a first conductivity type is described. In a surface region of the semiconductor body, at least one zone of a second conductivity type, opposite to the first conductivity type, is embedded. Regions of the second conductivity type are provided in the semiconductor body in a plane running substantially parallel to the surface of the surface region. The regions are in this case sufficiently highly doped that they cannot be depleted of charge carriers when a voltage is applied.