Thin layer metal chemical vapor deposition
US6849122B1 · kind B1 · utility
78Cited by
3References
26Claims
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Key dates
| Filing date | Mar 7, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Oct 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or all of the substrate surface; oxidizing the precursor to convert it to a conformal layer of metal oxide; and reducing some or all of the metal oxide to convert it to a conformal layer of the metal itself. The conformal layer of precursor may form a “monolayer” on the substrate surface. Examples of metals for deposition include copper, cobalt, ruthenium, indium, and rhodium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.