Magnetic memory device and method
US6850433B2 · kind B2 · utility
33Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Sep 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3277
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device can include a synthetic ferrimagnetic data, a soft reference layer and a tunneling layer. The synthetic ferrimagnetic data layer has a magnetic moment directable to a first orientation and a second orientation. The soft reference layer has a lower coercivity than the synthetic ferrimagnetic data layer. The tunneling layer has electrical resistance qualities which are influenced by magnetic moment orientations of the synthetic ferrimagnetic data layer and the soft reference layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.