Reactor for depositing thin film on wafer
US6852168B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 3, 2001 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | May 4, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45565
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film deposition reactor including a reactor block on which a wafer is placed, a shower head plate for uniformly maintaining a predetermined pressure by covering the reactor block, a wafer block installed in the reactor block, on which the wafer is to be seated; an exhausting portion connected to the reactor block for exhausting a gas from the reactor block; a first connection line in communication with the shower head plate, through which a first reaction gas and/or inert gas flow, a second connection line in communication with the shower head plate, through which a second reaction gas and/or inert gas flow, and a diffusion plate mounted on a lower surface of the shower head plate. The diffusion plate has a plurality of spray holes which are in communication with the first connection line and face the upper surface of the wafer to spray the first reaction gas and/or inert gas onto the wafer, and a plurality of nozzles which are in communication with the second connection line and extend toward the inner side surface of the reactor block to spray the second reaction gas and/or inert gas toward edges of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.